The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration. The integrated power MOSFETs have low R DS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space. The PWD13F60 device accepts a supply voltage (V CC) extending over a wide range and is protected by means of low-voltage UVLO detection on the supply voltage. The input pins extended range allows an easy interfacing with microcontrollers, DSP units or Hall effect sensors.

The SM72295 is designed to drive 4 discrete N type MOSFET's in a full bridge configuration. The drivers provide 3A of peak current for fast efficient.

File playercorefactory xml. The device is available in a compact VFQFPN package. Key Features • Power system-in-package integrating gate drivers and high-voltage power MOSFETs • Low R DS(on) = 320 mΩ • BV DSS = 600 V • Suitable for operating as • Full bridge • Dual independent half bridges • Wide driver supply voltage down to 6.5 V • UVLO protection on supply voltage • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Interlocking function to prevent cross conduction • Internal bootstrap diode • Outputs in phase with inputs • Very compact and simplified layout • Flexible, easy and fast design Circuit Diagram.

Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families of and silicon MOSFETs, IGBTs, Gallium Nitride HEMTs, and Silicon Carbide MOSFETs as well as such as Easy, Econo power modules, require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Our EiceDRIVER™ gate drivers provide advanced features such as integrated bootstrap diode(BSD), over current protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot through protection, active miller clamp, active shutdown, separate sink and source outputs, short circuit clamping, soft shutdown, two level turn off, galvanic isolation(functional, basic and reinforced), etc.

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